This document provides a guide for evaluating a CMP process for films deposited or grown on an unpatterned silicon substrate. These evaluations could include tests with fixed polishing time, fixed removal rate, fixed ending thickness, time-dependent material removal, and others.

Recommended procedures for characterizing a CMP process are discussed in this guide.

This guide suggests selected parameters and values of the properties of the starting monitor wafer.

This standard does not purport to address safety issues, if any, associated with its use. It is the responsibility of the users of this standard to establish appropriate safety health practices and determine the applicability or regulatory limitations prior to use.

Purpose

The purpose of this document is to provide a guide for evaluation of chemical-mechanical polishing (CMP) processes of thin films on unpatterned silicon substrates. This includes recommended procedures for process testing and reporting formats.

This guide is intended for use by both suppliers and end users.