This practice covers procedures for sampling polycrystalline silicon rods and growing single crystals from these samples by the float-zone technique. The resultant single crystal ingots are analyzed by spectrophotometric methods to determine the trace impurities in the polysilicon. These trace impurities are acceptor (usually boron or aluminum, or both), donor (usually phosphorus or arsenic, or both), and carbon impurities.

The useful range of impurity concentration covered by this practice is 0.002 to 100 parts per billion atomic (ppba) for acceptor and donor impurities, and 0.02 to 15 parts per million atomic (ppma) for carbon impurity. These impurities are analyzed in the ingot samples by infrared or photoluminescence spectroscopy.

This practice is applicable only to evaluation of polysilicon ingots grown by a method that utilizes a slim silicon rod (filament) upon which the polycrystalline silicon is deposited.

NOTICE: This standard does not purport to address safety issues, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health guides and determine the applicability of regulatory or other limitations prior to use.