These specifications cover the requirements for epitaxial layers of the generic composition A_aB_bC_c...N_n grown on monocrystalline wafers of GaAs or InP (other substrates may be considered where appropriate documents exist to describe the specification of the substrate). This document may only cover a portion of the properties considered to be part of the purchase specification.

This specification does not pur port to address safety issues, if any, associated with its use. It is the responsibility of the users of this specification to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Purpose

Compound semiconductor epi taxial layers have been extensively used for many years as the basis of high speed electronics and optoelectronic devices. There are suppliers of epitaxial layers who will grow material to the customer's specification. There is a need to define standardized descriptive terms, tolerance schedules and recommended test methods to reduce ambiguity in the interpretation of specifications for such wafers. Special emphasis is placed on the definitions pertaining to uniformity. This proposed document addresses only the basic requirements. Further clarification may be required between supplier and purchaser for the particular layers required.