The primary standardized properties set forth in this specification relate to physical and electrical characteristics of SIMOX wafers.

Purpose

This guide is for specification of SIMOX (separation by implantation of oxygen) wafers with less than 0.5 µm silicon film thickness used for semiconductor device manufacture. These specifications define the generic characteristics of SIMOX SOI wafers; the specific values for measured parameters will be determined by agreement between the user and supplier for the application. By defining parameters, inspection procedures, and acceptance criteria, both users and suppliers may uniformly define product characteristics and quality requirements.