| 1. |
. |
ASTM F 358 |
|
|
1983-NOV-28 • 已撤销 •
Standard Test Method for Wavelength of Peak Photoluminescence and the Corresponding Composition of Gallium Arsenide Phosphide Wafers
|
|
| 2. |
. |
ASTM F 418 |
|
|
1977-MAY-27 • 已撤销 •
Standard Practice for Preparation of Samples of the Constant Composition Region of Epitaxial Gallium Arsenide Phosphide for Hall Effect Measurements
|
|
| 3. |
. |
ASTM F 1212 |
|
|
1989-FEB-24 • 已撤销 •
Standard Test Method for Thermal Stability Testing of Gallium Arsenide Wafers
|
|
| 4. |
. |
ASTM F 1404 |
|
|
1992-MAY-15 • 现用 •
Test Method for Crystallographic Perfection of Gallium Arsenide by Molten Potassium Hydroxide (KOH) Etch Technique
|
|
| 5. |
. |
CECC CECC 12 001- 007 ISSUE 1 |
|
|
1984-JAN-01 • 现用 •
BS CECC 12 001-007; Image Intensifier: Inverting Proximity Focused Tube for Night Vision Equipment, Incorporating a Gallium Arsenide Photo-Cathode and a Filmed Micro-Channel Plate (En)
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|
| 6. |
. |
CNIS GB/T 8757-88 |
|
|
1988-FEB-25 • 现用 •
Determination of carrier concentration in gallium arsenide by the plasma resonance minimum
|
|
| 7. |
. |
CNIS GB/T 8758-88 |
|
|
1988-FEB-25 • 现用 •
Measuring thickness of epitaxial layers of gallium arsenide by infrared interference
|
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| 8. |
. |
CNIS GB/T 8760-88 |
|
|
1988-FEB-25 • 现用 •
Gallium arsenide single crystal--Determination of dislocation density
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| 9. |
. |
CNIS GB/T 11068-89 |
|
|
1989-MAR-31 • 现用 •
Gallium arsenide epitaxial layer--Determination of carrier concentration--Voltage-capacitance method
|
|
| 10. |
. |
CNIS GB/T 11093-89 |
|
|
1989-MAR-31 • 现用 •
Liquid encapaulated czochralski-grouwn gallium arsenide single crystals and As-cut slices
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