| 1. |
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ASTM E 684 |
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2004-NOV-01 现用
Standard Practice for Approximate Determination of Current Density of Large-Diameter Ion Beams for Sputter Depth Profiling of Solid Surfaces
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| 2. |
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ASTM E 1577 |
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2004-NOV-01 现用
Standard Guide for Reporting of Ion Beam Parameters Used in Surface Analysis
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| 3. |
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CNIS GB/T 15861-95 |
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1995-DEC-22 现用
Generic specification of ion beam etching system
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| 4. |
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ASTM E 942 |
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1996-JAN-01 现用
Standard Guide for Simulation of Helium Effects in Irradiated Metals
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| 5. |
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ASTM F 1192 |
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2000-JUN-10 现用
Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices
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| 6. |
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ASTM F 1894 |
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1998-MAY-10 现用
Test Method for Quantifying Tungsten Silicide Semiconductor Process Films for Composition and Thickness
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| 7. |
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ASTM E 1162 |
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2006-NOV-01 现用
Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)
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| 8. |
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ASTM F 1526 |
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1995-SEP-15 已撤销
Standard Test Method for Measuring Surface Metal Contamination on Silicon Wafers by Total Reflection X-Ray Fluorescence Spectroscopy-(Withdrawn 2003)
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| 9. |
. |
ASTM C 1672 |
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2007-JUN-01 现用
Standard Test Method for Determination of Uranium or Plutonium Isotopic Composition or Concentration by the Total Evaporation Method Using a Thermal Ionization Mass Spectrometer
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| 10. |
. |
ASTM E 521 |
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1996-JAN-10 现用
Standard Practice for Neutron Radiation Damage Simulation by Charged-Particle Irradiation
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