| 1. |
. |
ASTM F 41 |
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1990-JAN-01 • 已撤销 •
Standard Practice for Preparing Silicon Single Crystal by the Float-Zone Technique for Evaluation of Polysilicon Ingot
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| 2. |
. |
ASTM F 374 |
|
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2002-DEC-10 • 已撤销 •
Standard Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure-(Withdrawn 2003; No Replacement)
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| 3. |
. |
ASTM F 399 REV A |
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2000-DEC-10 • 已撤销 •
Standard Test Method for Thickness of Heteroepitaxial or Polysilicon Layers-(Withdrawn 2002; No Replacement)
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| 4. |
. |
ASTM F 574 |
|
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1988-JAN-01 • 已撤销 •
Standard Test Method for Evaluation of Polysilicon
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| 5. |
. |
ASTM F 1708 |
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2002-JAN-10 • 已撤销 •
Standard Practice for Evaluation of Granular Polysilicon by Melter-Zoner Spectroscopies-(Withdrawn 2003; No Replacement)
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| 6. |
. |
SEMI MF374 |
|
|
2007-MAR-01 • 现用 •
TEST METHOD FOR SHEET RESISTANCE OF SILICON EPITAXIAL, DIFFUSED, POLYSILICON, AND ION-IMPLANTED LAYERS USING AN IN-LINE FOUR-POINT PROBE WITH THE SINGLE-CONFIGURATION PROCEDURE
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| 7. |
. |
SEMI MF399 REV A |
|
|
2000-JAN-01 • 现用 •
Test Method for Thickness of Heteroepitaxial or Polysilicon Layers
|
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| 8. |
. |
SEMI MF1708 |
|
|
2004-NOV-01 • 现用 •
PRACTICE FOR EVALUATION OF GRANULAR POLYSILICON BY MELTER-ZONER SPECTROSCOPIES
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| 9. |
. |
ASTM F 391 |
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2002-DEC-10 • 已撤销 •
Standard Test Methods for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-State Surface Photovoltage-(Withdrawn 2003; No Replacement)
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| 10. |
. |
ASTM F 1723 |
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2002-JAN-10 • 已撤销 •
Standard Practice for Evaluation of Polycrystalline Silicon Rods by Float-Zone Crystal Growth and Spectroscopy
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